aot12n65/aotf12n65/aob12n65 650v, 12a n-channel mosfet general description product summary v ds i d (at v gs =10v) 12a r ds(on) (at v gs =10v) < 0.72 100% uis tested 100% r g tested 1000 aotf12n65 to-220f pb free tube 1000 aot12n65 to-220 pb free tube the aot12n65 & aotf12n65 & aob12n65 have been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac-dc applications. by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 750v@150 orderable part number package type form minimum order quantity top view g d s to-220 aot12n65 to-263 d 2 pak d s g aob12n65 g d s to-220f aotf12n65 g d s symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt t j , t stg t l symbol r ja r cs r jc * drain current limited by maximum junction tempera ture. 800 aotf12n65 to-220f pb free tube 1000 aotf12n65l to-220f green tube 1000 AOB12N65L to-263 green tape & reel v 30 gate-source voltage a w w/ o c c mj c mj derate above 25 o c maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 50 0.4 5 40 v units parameter absolute maximum ratings t a =25c unless otherwise noted aot(b)12n65 aotf12n65l drain-source voltage 650 aotf12n65 t c =100c a 48 pulsed drain current c continuous drain current t c =25c 12 i d avalanche current c 7.7 12* 7.7* 12* 7.7* 375 single plused avalanche energy g 750 5 repetitive avalanche energy c t c =25c thermal characteristics 300 -55 to 150 2.2 0.3 mosfet dv/dt ruggedness dv/dt v/ns 30 power dissipation b p d 278 0.45 -- units c/w 65 0.5 65 3.1 junction and storage temperature range maximum junction-to-ambient a,d maximum case-to-sink a maximum junction-to-case c/w c/w parameter aot(b)12n65 aotf12n65l aotf12n65 65 -- 2.5 rev.7.0: december 2014 www.aosmd.com page 1 of 6 downloaded from: http:///
symbol min typ max units 650 750 bv dss /?tj 0.72 v/ o c 1 10 i gss gate-body leakage current 100 n v gs(th) gate threshold voltage 3 3.9 4.5 v r ds(on) 0.57 0.72 g fs 17 s v sd 0.71 1 v i s maximum body-diode continuous current 12 a i sm 48 a c iss 1430 1792 2150 pf c oss 120 152 185 pf c rss 9 11.5 18 pf r g 1.7 3.5 5.3 q g 32 39.8 48 nc q gs 7.5 9.2 11 nc q gd 13.5 16.8 20 nc t d(on) 36 ns t r 77 ns t d(off) 120 ns t f 63 ns static drain-source on-resistance v gs =10v, i d =6a reverse transfer capacitance v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i d =6a forward transconductance turn-on rise time gate source charge gate drain charge diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zero gate voltage drain current v ds =650v, v gs =0v a bv dss maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime turn-off delaytime v gs =10v, v ds =325v, i d =12a, r g =25 gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =520v, i d =12a dynamic parameters v ds =5v i d =250 a v ds =520v, t j =125c v ds =0v, v gs =30v v drain-source breakdown voltage i d =250a, v gs =0v, t j =25c i d =250a, v gs =0v, t j =150c breakdown voltage temperature coefficient i d =250a, v gs =0v t rr 300 375 450 ns q rr 6 7.5 9 c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =12a,di/dt=100a/ s,v ds =100v body diode reverse recovery charge i f =12a,di/dt=100a/ s,v ds =100v body diode reverse recovery time a. the value of r ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsinking is use d. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r ja is the sum of the thermal impedence from junction t o case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =5a, v dd =150v, r g =25 ? , starting t j =25 c rev.7.0: december 2014 www.aosmd.com page 2 of 6 downloaded from: http:///
typical electrical and thermal characteristics 0 4 8 12 16 20 24 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 r ds(on) ( ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =6a 2.2 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c voltage temperature 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j ( o c) figure 5: break down vs. junction temperature rev.7.0: december 2014 www.aosmd.com page 3 of 6 downloaded from: http:///
typical electrical and thermal characteristics 0 3 6 9 12 15 0 10 20 30 40 50 60 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =520v i d =12a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 s 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 10: maximum forward biased safe 10 s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 s 1s 10s figure 9: maximum forward biased safe operating area for aot(b)12n65 (note f) figure 10: maximum forward biased safe operating area for aotf12n65 (note f) 0 2 4 6 8 10 12 14 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 12: current de-rating (note b) 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 11: maximum forward biased safe operating area for aotf12n65l (note f) 10 s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 s 1s 10s rev.7.0: december 2014 www.aosmd.com page 4 of 6 downloaded from: http:///
typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z jc normalized transient thermal resistance pulse width (s) figure 13: normalized maximum transient thermal imp edance for aot(b)12n65 (note f) d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =0.45 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p dm single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z jc normalized transient thermal resistance pulse width (s) figure 14: normalized maximum transient thermal imp edance for aotf12n65 (note f) d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =2.5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p dm 0.0001 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z jc normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance for aotf12n65l (note f) d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =3.1 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p dm rev.7.0: december 2014 www.aosmd.com page 5 of 6 downloaded from: http:///
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev.7.0: december 2014 www.aosmd.com page 6 of 6 downloaded from: http:///
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